Ua li cassilicon carbideua?
Txoj kev yooj yim tshaj plaws ntawm kev ua silicon carbide cuam tshuam nrog melting silica xuab zeb thiab carbon (xws li thee) ntawm qhov kub txog li 2500 degrees Celsius. Tsaus, ntau dua silicon carbide feem ntau muaj hlau thiab carbon impurities, tab sis ntshiab SiC crystals tsis muaj xim thiab tsim thaum silicon carbide sublimates ntawm 2,700 degrees Celsius. Tom qab cua sov, cov khoom siv lead ua no tau muab tso rau hauv graphite ntawm qhov kub thiab txias, txheej txheem hu ua Rayleigh txheej txheem.
Rayleigh txoj kev: Hauv cov txheej txheem no, granite crucible yog rhuab mus rau qhov kub siab heev, feem ntau yog induction, kom sublime cov hmoov silicon carbide. Qhov kub-kub graphite rods raug tshem tawm hauv cov roj sib tov, uas tseem ceeb tso cai rau cov ntshiab silicon carbide tso nyiaj thiab tsim cov khoom siv lead ua.
Chemical Vapor Deposition: Cov neeg tsim khoom tseem tuaj yeem loj hlob cubic silicon carbide siv tshuaj vapor deposition, uas yog feem ntau siv hauv cov txheej txheem carbon-based synthesis thiab hauv kev lag luam semiconductor. Nyob rau hauv txoj kev no, tshwj xeeb tshuaj sib tov ntawm gases nkag mus rau hauv lub tshuab nqus tsev ib puag ncig thiab ua ke ua ntej muab tso rau ib tug substrate.
Ob txoj hauv kev ntawm silicon carbide wafer ntau lawm yuav tsum muaj ntau lub zog, khoom siv, thiab kev paub kom ua tiav.
| SiC | Silicon Carbide |
| Qhov ntom | 3.21 g / cm³ |
| Molecular Luj / Molar Mass | 40.11 g / mol |
| Melting Point | 2,730 degree |
| Compound Formula | SiC |