Khoom Description
Raw material ratio ntawmdub silicon carbide hmoov: Cov khoom siv raw ntawm cov xim dub silicon carbide feem ntau suav nrog quartz xuab zeb, roj av coke lossis thee coke, ntoo chips, thiab lwm yam Cov txheej txheem ntawm cov dub silicon carbide muaj ntau cov kauj ruam, ua ntej ntawm tag nrho cov, cov ntaub ntawv raw xws li quartz xuab zeb, roj av coke, thiab silica yog sib xyaw raws li ib qho kev faib ua feem, thiab tom qab ntawd ntxiv rau lub qhov cub ua haujlwm rau qhov kub thiab txias. Cov khoom tiav tom qab smelting yog silicon carbide thaiv. Tom qab ntawd, vim yog qhov nyuaj ntawm silicon carbide, nws yog ib qho tsim nyog yuav tsum siv lub puab tsaig crusher rau ntxhib crushing, tom qab ntawd lub khob hliav qab crusher rau nplua crushing, ua raws li qhov loj me me, thiab thaum kawg sib tsoo kom tau silicon carbide xuab zeb lossis silicon carbide hmoov. sib txawv particle loj.
Cov khoom parameter
| Grit | Sic | F.C. | Fe2O 3 |
| F12-F90 | Ntau dua lossis sib npaug rau 98.50 | <0.20 | Tsawg dua lossis sib npaug rau 0.60 |
| F100-F150 | Ntau dua lossis sib npaug rau 98.00 | <0.30 | Tsawg dua lossis sib npaug rau 0.80 |
| F180-F220 | Ntau dua lossis sib npaug rau 97.00 | <0.30 | Tsawg dua lossis sib npaug li 1.20 |
| F230-F400 | Ntau dua lossis sib npaug rau 96.00 | <0.40 | Tsawg dua lossis sib npaug li 1.20 |
| F500-F800 | Ntau dua lossis sib npaug rau 95.00 | <0.40 | Tsawg dua lossis sib npaug li 1.20 |
| F1000-F1200 | Ntau dua lossis sib npaug rau 93.00 | <0.50 | Tsawg dua lossis sib npaug li 1.20 |
| P12-F90 | Ntau dua lossis sib npaug rau 98.50 | <0.20 | Tsawg dua lossis sib npaug rau 0.60 |
| P100-P150 | Ntau dua lossis sib npaug rau 98.00 | <0.30 | Tsawg dua lossis sib npaug rau 0.80 |
| P180-P220 | Ntau dua lossis sib npaug rau 97.00 | <0.30 | Tsawg dua lossis sib npaug li 1.20 |
| P230-P500 | Ntau dua lossis sib npaug rau 96.00 | <0.40 | Tsawg dua lossis sib npaug li 1.20 |
| P600-P1500 | Ntau dua lossis sib npaug rau 95.00 | <0.40 | Tsawg dua lossis sib npaug li 1.20 |
| P2000-P2500 | Ntau dua lossis sib npaug rau 93.00 | <0.50 | Tsawg dua lossis sib npaug li 1.20 |
Cov khoom sib koom tes duab
1.Nyob rau hauv cov nqe lus ntawm raw khoom piv, raw cov ntaub ntawv siv nyob rau hauv cov tsoosdub silicon carbide hmoovntau lawm muaj xws li quartz xuab zeb, coke, ntsev (sodium chloride), ntoo chips, thiab lwm yam, uas reacts nrog cov pa roj carbon monoxide quartz xuab zeb los ua dub silicon carbide ntawm qhov kub ntawm 2200 ~ 2500 degree. Cov qauv tshuaj tiv thaiv yog: SiO2+3C→SiC+2COtext{SiO}_2 + 3C rightarrow text{SiC} + 2text{CO}SiO2+3C →SiC+2CO. Tom qab cov khoom siv lead ua silicon carbide tau ci, lawv yuav tsum dhau los ntawm kev xaiv tes, crushing, sib nqus sib nqus, tshuaj ntsuam xyuas thiab lwm yam txheej txheem kom tau txais cov ntshiab silicon carbide. Tsis tas li ntawd, muaj ib txoj hauv kev tshiab los ua cov silicon carbide dub, uas siv cov khib nyiab pov tseg los ntawm cov phab ntsa ntawm lub cub tawg thaum lub qhov cub graphitization tsim cov graphite electrode. Nyob rau hauv txoj kev no, thaum graphitizing rauv yog siv los tsim graphite electrodes, qhov kub ntawm lub electrode them chamber nyob rau hauv lub cub tawg yog 2500 ~ 2700 degree, thiab muaj ib tug kub gradient teb ntawm 2500 degree ~ chav tsev kub raws li lub thickness ntawm lub cub tawg phab ntsa. , nyob rau hauv uas qhov ntau ntawm 2500 ~ 2200 degree yog qhov chaw uas silicon carbide generated thiab crystallized. Thaum silica thiab carbon muab tso rau hauv qhov chaw no hauv ib qho kev faib ua feem, dub silicon carbide yog generated. Cov ntaub ntawv raw siv rau hauv txoj kev no yog ib txwm zoo ib yam li cov siv hauv kev npaj cov khoom no, uas yuav tsum tau coke, quartz xuab zeb, ntsev, ntoo chips, thiab lwm yam, thiab graphitization rauv rau zus tau tej cov graphite electrodes yog lub ntsiab. khoom siv.
Cim npe nrov: Cov khoom siv zoo dub silicon carbide hmoov, Tuam Tshoj cov khoom zoo dub silicon carbide hmoov manufacturers, lwm tus neeg, Hoobkas