Siab qib khoom silicon carbide

TMAH tuaj yeem ua kom nce qib zeta muaj peev xwmSilicon CarbideHmoov thiab txo qhov viscosity ntawm sleecosity ntawm slurry, yog lam tau optimizing lub hwj chim ntawm cov slurry. Thaum pH txog 1 {{4 4}}, tus zeta muaj peev xwm nce los ntawm 11.7 MV thiab 21 MV, tom qab}. 3% thiab 0.6% tmah. Kev tawm dag zog ntau dhau yuav nce cov ion concentration hauv slurry thiab ua rau txo qis ntawm lub tshuab hluav taws xob, yog li ua rau cov slurry.

1.Ib txoj kev rau kev npaj silicon-hloov cov yeeb yaj kiab nyias nyias ntawm reactive sinteredSilicon Carbide(RB-SIC) cov ntaub ntawv los ntawm kev siv chav tsev-hom ion los pab Electron nqaj evaporation, thiab cov txiaj ntsig polishing ntawm cov kev sib txawv ntawm cov nqi sib txawv tau kawm. Nto scationing thiab reaction ntsuas tau nqa tawm ntawm cov qauv. Cov qauv micrographs ntawm cov qauv qhia tau hais tias cov qauv ntawm cov sillicon zaj duab xis txheej zoo li tau xoob nyob rau hauv qhov xwm txheej ntawm qhov xwm txheej ntawm kev nce nqi nyiaj txiag. Tom qab finely polishing cov refining sintering ntawm silicon carbide cov yeeb yaj kiab txo qis rau 1.46%, thiab kev cuam tshuam yog ze rau ntawm cov ntsej muag zoo-polished iav-ceramic. Qhov ntsuas kub hnyav thiab ntsuas tensile qhia tias cov yeeb yaj kiab Tension qhia tau tias, yog qhov ruaj khov nyob hauv qhov, thiab muaj kev sib xyaw ua ke nrog silicon carbide substrate.

Cim npe nrov: Siab qib khoom silicon carbide, Tuam Tshoj siab cov khoom lag luam silicon carbide cov chaw tsim khoom, cov chaw muag khoom, Hoobkas