Semiconductor-qib silicon carbide - powering yav tom ntej
Electronic-grade silicon carbide (6H/4H polytypes) sets new benchmarks with: Resistivity: >1x10⁵ ωk cm, microopipe rensity:<1 cm⁻²
Nto Roughness: Ra tsawg dua lossis sib npaug ntawm {{0nm song
Hloov Cov Ntawv Thov
Doped sic: Aluminium (5x10¹⁸ atoms /m³) rau ohmic contacts
Sic epitaxial substrates: {10-100 μm thickness nrog tsawg dua los yog sib npaug rau 5% thickness variation
Quantum-grade SiC: NV center density >500 / mm³³ rau Quantum Sensing
Silicon Carbide tsis
|
Trademark |
Zhenan |
|
Khoom |
Silicon Carbide |
|
Kev coj dawb huv |
88% 90% 98% |
|
Lub cev |
Grit thiab hmoov |
|
Hs code |
284920 |

Kev Ua Thawj Coj Zoo
Kev Ua Haujlwm Chav Kawm 1 {{0 i, iso {{14644-1} {txheej txheem tswj thiab semi s2 / s8 ua raws. Koom tes nrog Fraunhofer Institute, peb tau tsim kho cov tswv cuab cov tswv yim ua tiav kev ua tiav 0.02ppB mellom mellic me me. Peb Wafer Cov Khoom Siv Khoom Muag Khoom Siv Cov Lus Qhia Nitrogen-Zaws Ntoo nrog cov av noo
Cim npe nrov: Silicon carbide rau refridory cov khoom siv, Tuam Tshoj sivicon carbide rau refiritory cov khoom siv tsim khoom, cov chaw muag khoom, Hoobkas

