Silicon-carbon alloys: Kev ntsuas kev tshaj tawm thiab cov ntawv thov siab tshaj plaws

1.1 atomic qauv thiab tsevneeg

Silicon-carbon alloys ua pov thawj peb txoj kev teeb tsa kev sib koom ua ke:

Kev sib cavalent SI SI-C (feem ntau hauv Sic, Bond ntev ~ 1.89 Å)

Metallic Si-Si Bonds (hauv Silicon-nplua nuj theem)

Sp² / sp³ hybridized cc sib khi (graphitic / amorphous carbon xij)

Tus qauv hluav taws xob qhia:

SIC Bandgap: 2. {3-3. 3 ev (sib txawv los ntawm polytype)

Ua Haujlwm: 4. {5-5. 1 ev (rau cov ntawv thov soob)

1.2 thermodynamic cov zog

Tseem ceeb thermodynamic tsis:

Theem Degram xav txog:

Si-C Binary System Qhia Eutectic ntawm 1414 degree (Si-nplua nuj)

SiC stability range: >1700 degree ntawm cov qauv siab

2.1 high-purity synthesis txoj kev

Acheson txheej txheem (muaj Sic):

Cov tshuaj tiv thaiv: Sio₂ + 3 c} c → -Sic {2}} co ({}}}}}} degree)

Khoom: Hexagonal -sic (6H, 4H polytypes)

Kob Txom Nyem Tswj:<50 ppm metallic contaminants

Chemical Vapor Deposition (Electronic Qib):

Progursors: Sih₄ + C₃h₈ ntawm 1200-1600 degree

Kev Loj Hlob: {5-50 μm / hr

Kho Mob Quav:<10³ cm⁻² for epitaxial layers

2.2 nanostructuring ze

Tub ntxhais-plhaub Si @ C Anode Khoom:

Architecture: {{{{{{{{}} nm si cores nrog 5-20 nm carbon txheej

Capacity retention: >80% Tom qab 500 Cycles (vs 20% rau liab qab SI)

Fabrication:

RF sputtering ntawm Si

CVD carbon encapsulation

Ntshav Degice Ua Haujlwm

3D Porous Scaffolds:

Porosity: 60-80% (pore loj {1}} nm)

Thaj chaw nto: 300-800 m² / g

Fabrication:

Template-Pab Etching

Khov Casting

Xaiv Laser Sintering

Cim npe nrov: Silicon-carbon alloys: kev siv ntsuas ntsuas thiab cov ntaub ntawv tshaj lij, Tuam Tshoj cov ntaub ntawv tshwj xeeb thiab cov ntaub ntawv tshwj xeeb, cov chaw muag khoom, lub hoobkas